Nanowire fin field effect transistors via UV-based nanoimprint lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 6, 2006, Pages 2964-2967

  Fuchs, A ^a   Bender, M ^a   Plachetka, U ^a   Kock, L ^a   Wahlbrink, T ^a   Gottlob, H D B ^a   Efavi, J K ^a   Moeller, M ^a   Schmidt, M ^a   Mollenhauer, T ^a   Moormann, C ^a   Lemme, M C ^a   Kurz, H ^a  

^a AMO GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; ULTRAVIOLET RADIATION;

FIN FIELD EFFECT TRANSISTORS (FINFET); FUNCTIONAL LAYERS; NANOELECTRONIC DEVICES;

FIELD EFFECT TRANSISTORS;

EID: 33845238069     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2395956     Document Type: Article

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