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Volumn 3, Issue , 2006, Pages 846-849

A compact model of ballistic CNFET for circuit simulation

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATORS; INTRINSIC BALLISTIC CNFET; QUASI ANALYTICAL DEVICE MODELS;

EID: 33845201467     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (3)

References (12)
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  • 2
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    • J. Guo, S. Datta, and M. Lundstrom, "Assesment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors," IEDM tech. digest, pp. 29.3.1-29.3.4, 2002.
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    • Guo, J.1    Datta, S.2    Lundstrom, M.3
  • 3
    • 21644440311 scopus 로고    scopus 로고
    • Performance analysis and design optimization of near ballistic carbon nanotube FETs
    • J. Guo, A. Javey, H. Dai, and M. Lundstrom, "Performance analysis and design optimization of near ballistic carbon nanotube FETs," IEDM tech. digest, pp. 703-706, 2004.
    • (2004) IEDM Tech. Digest , pp. 703-706
    • Guo, J.1    Javey, A.2    Dai, H.3    Lundstrom, M.4
  • 4
    • 0042338529 scopus 로고    scopus 로고
    • Semiclassical transport and phonon scattering of electrons in semiconducting carbon nanotubes
    • G. Pennington, and N. Goldsman, "Semiclassical transport and phonon scattering of electrons in semiconducting carbon nanotubes," Physical Review B, vol. 68, pp. 045426-1-045426-11, 2003.
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    • Pennington, G.1    Goldsman, N.2
  • 5
    • 20344368353 scopus 로고    scopus 로고
    • Semi-empirical SPICE models for carbon nanotube FET logic
    • C. Dwyer, M. Cheung, and D J. Sorin, "Semi-empirical SPICE Models for Carbon Nanotube FET Logic," IEEE Nano Letters, vol. 4, pp. 35-39, 2004.
    • (2004) IEEE Nano Letters , vol.4 , pp. 35-39
    • Dwyer, C.1    Cheung, M.2    Sorin, D.J.3
  • 6
    • 5444266124 scopus 로고    scopus 로고
    • A circuit compatible model of ballistic carbon nanotube FETs
    • A. Raychowdhury, S. Mukhopadhyay, and K. Roy, "A circuit compatible model of ballistic carbon nanotube FETs," IEEE Trans. on CAD, vol. 23, pp. 1411-1420, 2004.
    • (2004) IEEE Trans. on CAD , vol.23 , pp. 1411-1420
    • Raychowdhury, A.1    Mukhopadhyay, S.2    Roy, K.3
  • 7
    • 13644274218 scopus 로고    scopus 로고
    • Characteristics of a carbon nanotube field-effect transistor analyzed as a ballistic nanowire field-effect transistor
    • Jan
    • K. Natori, Y. Kimura, and T. Shimizu, "Characteristics of a carbon nanotube field-effect transistor analyzed as a ballistic nanowire field-effect transistor," Journal of Applied Physics, vol. 97, pp. 034306-1-034306-7, Jan, 2005.
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    • Natori, K.1    Kimura, Y.2    Shimizu, T.3
  • 8
    • 33751430711 scopus 로고    scopus 로고
    • Analytical model for nanowire and nanotube transistors covering both dissipative and ballistic transport
    • Grenoble, France
    • G. Mugnaini, and G. Iannaccone, "Analytical model for nanowire and nanotube transistors covering both dissipative and ballistic transport," Proc. of Europian Solid State Device Research Conference (ESSDERC), Grenoble, France, pp. 213-216, 2005.
    • (2005) Proc. of Europian Solid State Device Research Conference (ESSDERC) , pp. 213-216
    • Mugnaini, G.1    Iannaccone, G.2
  • 10
    • 0042991275 scopus 로고    scopus 로고
    • Ballistic carbon nanotube field-effect transistor
    • A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, "Ballistic carbon nanotube field-effect transistor," Nature, vol. 424, pp. 654-657, 2003.
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    • Javey, A.1    Guo, J.2    Wang, Q.3    Lundstrom, M.4    Dai, H.5
  • 11
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    • Aug.
    • S. J. Wind, J. Appenzeller, and P. Avouris, "Lateral scaling in carbon nanotube field-effect transistors," Physical Review Letters, vol. 91, pp. 058301-1-058301-4, Aug. 2003.
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    • Wind, S.J.1    Appenzeller, J.2    Avouris, P.3
  • 12
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.