Evaluation of the initial growth of electroless deposited Co(W,P) diffusion barrier thin film for Cu metallization

Journal of Solid State Chemistry

Volumn 179, Issue 12, 2006, Pages 4056-4065

  Zhu, Aaron ^a   Shacham Diamand, Yossi ^b,c   Teo, Mark ^a  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

^b TEL AVIV UNIVERSITY   (Israel)

^c WASEDA UNIVERSITY   (Japan)

Author keywords

Co(W,P); Crystal growth; Deposition; Scanning tunneling microscopy (STM); Thin films

Indexed keywords

ACTIVATION ENERGY; COPPER COMPOUNDS; CRYSTAL GROWTH; ELECTROLESS PLATING; SCANNING TUNNELING MICROSCOPY; SILICON; X RAY DIFFRACTION;

BARRIER LAYER; IMMERSION MEASUREMENT; MEAN FREE PATH;

THIN FILMS;

EID: 33751517412     PISSN: 00224596     EISSN: 1095726X     Source Type: Journal    
DOI: 10.1016/j.jssc.2006.09.002     Document Type: Article

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