Enhancing the reliability of n+-p junction diodes using plasma treated tantalum barrier film

Microelectronic Engineering

Volumn 84, Issue 1, 2007, Pages 151-160

  Ou, Keng Liang ^a   Wu, Wen Fa ^b   Chiou, Shi Yung ^c  

^a TAIPEI MEDICAL UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

Author keywords

Amorphization; Copper; Hydrogen; Tantalum

Indexed keywords

AMORPHIZATION; AMORPHOUS FILMS; ANNEALING; COPPER; DIFFUSION; HYDROGEN; PLASMA HEATING; RELIABILITY; TANTALUM; THERMODYNAMIC STABILITY;

AMORPHOUS LAYERS; JUNCTION DIODES; PLASMA NITRIDATION; TANTALUM BARRIER FILMS;

SEMICONDUCTOR DIODES;

EID: 33751418921     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.09.021     Document Type: Article

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