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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 5, 2002, Pages 2154-2161

Improved TaN barrier layer against Cu diffusion by formation of an amorphous layer using plasma treatment

(5) Ou, Keng Liang a Wu, Wen Fa b Chou, Chang Pin a Chiou, Shi Yung c Wu, Chi Chang b

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b NATIONAL NANO DEVICE LABORATORIES (Taiwan)

c NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CHARACTERIZATION; COPPER; DIFFUSION IN SOLIDS; ELECTRIC PROPERTIES; HETEROJUNCTIONS; LEAKAGE CURRENTS; NANOTECHNOLOGY; PLASMA APPLICATIONS; SEMICONDUCTOR DIODES; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY;

JUNCTION DIODES; PLASMA TREATMENT; REVERSE BIASED JUNCTION LEAKAGE; SHEET RESISTANCE; TANTALUM NITRIDE;

METALLIC FILMS;

EID: 0036026399 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1511214 Document Type: Article

Times cited : (24)

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