Interfacial reactions and electrical properties of hafnium-based thin films in Cu/barrier/n+-p junction diodes

Microelectronic Engineering

Volumn 77, Issue 2, 2005, Pages 184-192

  Ou, Keng Liang ^a   Tsai, Ming Hung ^b   Huang, Haw Ming ^a   Chiou, Shi Yung ^c   Lin, Che Tong ^a   Lee, Sheng Yang ^a,d  

^a TAIPEI MEDICAL UNIVERSITY   (Taiwan)

^b EN CHU KONG HOSPITAL   (Taiwan)

^c NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

^d TAIPEI MEDICAL UNIVERSITY   (Taiwan)

Author keywords

Copper; Hafnium; Junction diodes; Nitrides; Sputtering

Indexed keywords

COPPER; DIODES; ELECTRIC RESISTANCE; HAFNIUM; INTERFACES (MATERIALS); NITRIDES; SEMICONDUCTOR JUNCTIONS; SPUTTERING; SURFACE REACTIONS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BARRIER FILMS; JUNCTION DIODES; MATERIAL ANALYSES; SHEET RESISTANCE;

THIN FILMS;

EID: 12444317572     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.10.006     Document Type: Article

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