-
1
-
-
6344289296
-
Temperature-intesive eye-opening under 10-Gb/s modulation of 1.3-m p-doped quantum-dot lasers without current adjustments
-
0021-4922
-
Otsubo, K., Hatori, N., Ishida, M., Okumura, S., Akiyama, T., Nakata, Y., Ebe, H., Sugawara, M., and Arakawa, Y.: ' Temperature-intesive eye-opening under 10-Gb/s modulation of 1.3-m p-doped quantum-dot lasers without current adjustments ', Jpn J. Appl. Phys. 2, Lett., 2004, 43, p. L1124 0021-4922
-
(2004)
Jpn J. Appl. Phys. 2, Lett.
, vol.43
, pp. 1124
-
-
Otsubo, K.1
Hatori, N.2
Ishida, M.3
Okumura, S.4
Akiyama, T.5
Nakata, Y.6
Ebe, H.7
Sugawara, M.8
Arakawa, Y.9
-
2
-
-
11044225644
-
The role of Auger recombination in the temperature-dependent output characteristics (T∼0=) of p-doped 1.3m quantum dot lasers
-
10.1063/1.1829158 0003-6951
-
Fathpour, S., Mi, Z., Bhattacharya, P., Kovsh, A.R., Mikhrin, S.S., Krestnikov, I.L., Kozhukhov, A.V., and Ledentsov, N.N.: ' The role of Auger recombination in the temperature-dependent output characteristics (T∼0=) of p-doped 1.3m quantum dot lasers ', Appl. Phys. Lett., 2004, 85, p. 5164 10.1063/1.1829158 0003-6951
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 5164
-
-
Fathpour, S.1
Mi, Z.2
Bhattacharya, P.3
Kovsh, A.R.4
Mikhrin, S.S.5
Krestnikov, I.L.6
Kozhukhov, A.V.7
Ledentsov, N.N.8
-
3
-
-
24144498705
-
High power temperature-insensitive 1.3m InAs/InGaAs/GaAs quantum dot lasers
-
10.1088/0268-1242/20/5/002 0268-1242
-
Mikhrin, S.S., Kovsh, A.R., Krestnikov, I.L., Kozhukhov, A.V., Livshits, D.A., Ledentsov, N.N., Shernyakov, Y.M., Novikov, I.I., Maximov, M.V., and Ustinov, V.M.: ' High power temperature-insensitive 1.3m InAs/InGaAs/GaAs quantum dot lasers ', Semicond. Sci. Technol., 2005, 20, p. 340 10.1088/0268-1242/20/5/002 0268-1242
-
(2005)
Semicond. Sci. Technol.
, vol.20
, pp. 340
-
-
Mikhrin, S.S.1
Kovsh, A.R.2
Krestnikov, I.L.3
Kozhukhov, A.V.4
Livshits, D.A.5
Ledentsov, N.N.6
Shernyakov, Y.M.7
Novikov, I.I.8
Maximov, M.V.9
Ustinov, V.M.10
-
4
-
-
28244491683
-
Measurement of model gain in 1.1m p-doped tunnel injection InGaAs/GaAs quantum dot laser heterostructures
-
10.1049/el:20053374 0013-5194
-
Mi, Z., Fathpour, S., and Bhattacharya, P.: ' Measurement of model gain in 1.1m p-doped tunnel injection InGaAs/GaAs quantum dot laser heterostructures ', Electron. Lett., 2005, 41, p. 1282 10.1049/el:20053374 0013-5194
-
(2005)
Electron. Lett.
, vol.41
, pp. 1282
-
-
Mi, Z.1
Fathpour, S.2
Bhattacharya, P.3
-
5
-
-
33645164034
-
The effect of p doping in InAs quantum dot lasers
-
10.1063/1.2186078 0003-6951
-
Sandall, I.C., Smowton, P.M., Walker, C.L., Badcock, T., Mowbray, D.J., Liu, H.Y., and Hopkinson, M.: ' The effect of p doping in InAs quantum dot lasers ', Appl. Phys. Lett., 2006, 88, p. 111113 10.1063/1.2186078 0003-6951
-
(2006)
Appl. Phys. Lett.
, vol.88
, pp. 111113
-
-
Sandall, I.C.1
Smowton, P.M.2
Walker, C.L.3
Badcock, T.4
Mowbray, D.J.5
Liu, H.Y.6
Hopkinson, M.7
-
6
-
-
27844532235
-
Carrier transport and recombination in p-doped InAs/GaAs quantum dots
-
10.1063/1.2135204 0003-6951
-
Marko, I.P., Masse, N.F., Sweeney, S.J., Andreev, A.D., Adams, A.R., Hatori, N., and Sugawara, M.: ' Carrier transport and recombination in p-doped InAs/GaAs quantum dots ', Appl. Phys. Lett., 2005, 87, p. 211114 10.1063/1.2135204 0003-6951
-
(2005)
Appl. Phys. Lett.
, vol.87
, pp. 211114
-
-
Marko, I.P.1
Masse, N.F.2
Sweeney, S.J.3
Andreev, A.D.4
Adams, A.R.5
Hatori, N.6
Sugawara, M.7
-
7
-
-
33644956550
-
Carrier dynamics in modulation-doped InAs/GaAs quantum dots
-
0031-899X
-
Siegert, J., Marcinkevicius, S., and Zhao, Q.X.: ' Carrier dynamics in modulation-doped InAs/GaAs quantum dots ', Phys. Rev., 2005, 72, p. 085316 0031-899X
-
(2005)
Phys. Rev.
, vol.72
, pp. 085316
-
-
Siegert, J.1
Marcinkevicius, S.2
Zhao, Q.X.3
-
8
-
-
4344634808
-
Improved performance of 1.3m multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer
-
10.1063/1.1776631 0003-6951
-
Liu, H.Y., Sellers, I.R., Badcock, T.J., Mowbray, D.J., Skolnick, M.S., Groom, K.M., Gutierrez, M., Hopkinson, M., Ng, J.S., and David, J.P.R.: ' Improved performance of 1.3m multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer ', Appl. Phys. Lett., 2004, 85, p. 704 10.1063/1.1776631 0003-6951
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 704
-
-
Liu, H.Y.1
Sellers, I.R.2
Badcock, T.J.3
Mowbray, D.J.4
Skolnick, M.S.5
Groom, K.M.6
Gutierrez, M.7
Hopkinson, M.8
Ng, J.S.9
David, J.P.R.10
-
9
-
-
1342282397
-
Characterization of semiconductor laser gain media by the segmented contact method
-
10.1109/JSTQE.2003.819472 1077-260X
-
Blood, P., Lewis, G.M., Smowton, P.M., Summers, H., Thomson, J., and Lutti, J.: ' Characterization of semiconductor laser gain media by the segmented contact method ', IEEE J. Sel. Top. Quantum Electron., 2003, 9, p. 1275 10.1109/JSTQE.2003.819472 1077-260X
-
(2003)
IEEE J. Sel. Top. Quantum Electron.
, vol.9
, pp. 1275
-
-
Blood, P.1
Lewis, G.M.2
Smowton, P.M.3
Summers, H.4
Thomson, J.5
Lutti, J.6
-
10
-
-
26844505163
-
The role of high growth temperature GaAs spacer layers in 1.3-m In(Ga)As quantum-dot lasers
-
10.1109/LPT.2005.854393
-
Walker, C.L., Sandall, I.C., Smowton, P.M., Sellers, I.R., Mowbray, D.J., Liu, H.Y., and Hopkinson, M.: ' The role of high growth temperature GaAs spacer layers in 1.3-m In(Ga)As quantum-dot lasers ', IEEE Photon. Technol. Lett., 2005, 17, p. 2011 10.1109/LPT.2005.854393
-
(2005)
IEEE Photon. Technol. Lett.
, vol.17
, pp. 2011
-
-
Walker, C.L.1
Sandall, I.C.2
Smowton, P.M.3
Sellers, I.R.4
Mowbray, D.J.5
Liu, H.Y.6
Hopkinson, M.7
-
11
-
-
0037164784
-
Experimental investigation of the effect of wetting-layer states on the gain-current characteristic of quantum-dot lasers
-
10.1063/1.1532549 0003-6951
-
Matthews, D.R., Summers, H.D., Smowton, P.M., and Hopkinson, M.: ' Experimental investigation of the effect of wetting-layer states on the gain-current characteristic of quantum-dot lasers ', Appl. Phys. Lett., 2002, 81, p. 4904 10.1063/1.1532549 0003-6951
-
(2002)
Appl. Phys. Lett.
, vol.81
, pp. 4904
-
-
Matthews, D.R.1
Summers, H.D.2
Smowton, P.M.3
Hopkinson, M.4
-
12
-
-
0035280076
-
Bistable operation of a two-section 1.3-m InAs quantum dot laser-absorption saturation and the quantum confined stark effect
-
10.1109/3.910451 0018-9197
-
Huang, X., Stintz, A., Li, H., Rice, A., Liu, G.T., Lester, L.F., Cheng, J., and Malloy, K.J.: ' Bistable operation of a two-section 1.3-m InAs quantum dot laser-absorption saturation and the quantum confined stark effect ', IEEE J. Quantum Electron., 2001, 37, p. 414 10.1109/3.910451 0018-9197
-
(2001)
IEEE J. Quantum Electron.
, vol.37
, pp. 414
-
-
Huang, X.1
Stintz, A.2
Li, H.3
Rice, A.4
Liu, G.T.5
Lester, L.F.6
Cheng, J.7
Malloy, K.J.8
-
13
-
-
0001420731
-
Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots
-
10.1103/PhysRevLett.84.733 0031-9007
-
Fry, P.W., Itskevich, I.E., Mowbray, D.J., Skolnick, M.S., Finley, J.J., Barker, J.A., O'Reilly, E.P., Wilson, L.R., Larkin, I.A., and Maksym, P.A.: ' Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots ', Phys. Rev. Lett., 2000, 84, p. 733 10.1103/PhysRevLett.84.733 0031-9007
-
(2000)
Phys. Rev. Lett.
, vol.84
, pp. 733
-
-
Fry, P.W.1
Itskevich, I.E.2
Mowbray, D.J.3
Skolnick, M.S.4
Finley, J.J.5
Barker, J.A.6
O'Reilly, E.P.7
Wilson, L.R.8
Larkin, I.A.9
Maksym, P.A.10
|