-
1
-
-
0027593434
-
A theoretical analysis of self-sustained pulsation phenomena in narrow-stripe semiconductor lasers
-
10.1109/3.236146 0018-9197
-
Yamada, M.: ' A theoretical analysis of self-sustained pulsation phenomena in narrow-stripe semiconductor lasers ', IEEE J. Quantum Electron., 1993, 29, (5), p. 1330-1336 10.1109/3.236146 0018-9197
-
(1993)
IEEE J. Quantum Electron.
, vol.29
, Issue.5
, pp. 1330-1336
-
-
Yamada, M.1
-
2
-
-
0021436806
-
Pulsations of semiconductor lasers with proton bombarded segment: Well-developed pulsations
-
10.1109/JQE.1985.1072706 0018-9197
-
Kuznetsov, M.: ' Pulsations of semiconductor lasers with proton bombarded segment: well-developed pulsations ', IEEE J. Quantum Electron., 1985, 21, (6), p. 587-592 10.1109/JQE.1985.1072706 0018-9197
-
(1985)
IEEE J. Quantum Electron.
, vol.21
, Issue.6
, pp. 587-592
-
-
Kuznetsov, M.1
-
3
-
-
0029635498
-
Self-pulsating lasers with quantum well saturable absorber
-
10.1063/1.115545 0003-6951
-
Hoskens, R.C.P., van de Roer, T.G., van der Poel, C.J., and Ambrosius, H.P.M.: ' Self-pulsating lasers with quantum well saturable absorber ', Appl. Phys. Lett., 1995, 67, (10), p. 1343-1345 10.1063/1.115545 0003-6951
-
(1995)
Appl. Phys. Lett.
, vol.67
, Issue.10
, pp. 1343-1345
-
-
Hoskens, R.C.P.1
Van De Roer, T.G.2
Van Der Poel, C.J.3
Ambrosius, H.P.M.4
-
4
-
-
0033123725
-
Theoretical optimization of self-pulsating 650-nm-wavelength AlGaInP laser diodes
-
10.1109/2944.788445 1077-260X
-
Jones, D.R., Rees, P., Pierce, I., and Summers, H.D.: ' Theoretical optimization of self-pulsating 650-nm-wavelength AlGaInP laser diodes ', IEEE J. Sel. Top. Quantum Electron., 1999, 5, (3), p. 740-744 10.1109/2944.788445 1077-260X
-
(1999)
IEEE J. Sel. Top. Quantum Electron.
, vol.5
, Issue.3
, pp. 740-744
-
-
Jones, D.R.1
Rees, P.2
Pierce, I.3
Summers, H.D.4
-
5
-
-
0035247036
-
Investigation of changes in absorber position in the 650-nm AlGaInP self-pulsating laser for optical storage applications
-
10.1049/ip-opt:20010103 1350-2433
-
Jones, D.R., Rees, P., Pierce, I., and Summers, H.D.: ' Investigation of changes in absorber position in the 650-nm AlGaInP self-pulsating laser for optical storage applications ', IEE Proc., Optoelectron., 2001, 148, (1), p. 65-68 10.1049/ip-opt:20010103 1350-2433
-
(2001)
IEE Proc., Optoelectron.
, vol.148
, Issue.1
, pp. 65-68
-
-
Jones, D.R.1
Rees, P.2
Pierce, I.3
Summers, H.D.4
-
6
-
-
0042426020
-
Self-pulsation in InGaN laser diodes with saturable absorber layers
-
10.1063/1.1599622 0003-6951
-
Ohno, T., Ito, S., Kawakami, T., and Taneya, M.: ' Self-pulsation in InGaN laser diodes with saturable absorber layers ', Appl. Phys. Lett., 2003, 83, (6), p. 1098-1100 10.1063/1.1599622 0003-6951
-
(2003)
Appl. Phys. Lett.
, vol.83
, Issue.6
, pp. 1098-1100
-
-
Ohno, T.1
Ito, S.2
Kawakami, T.3
Taneya, M.4
-
7
-
-
0347946761
-
Self-pulsation in an InGaN laser - Theory and experiment
-
10.1109/JQE.2003.819541 0018-9197
-
Tronciu, V.Z., Yamada, M., Ohno, T., Ito, S., Kawakami, T., and Taneya, M.: ' Self-pulsation in an InGaN laser - theory and experiment ', IEEE J. Quantum Electron., 2003, 39, (12), p. 1509-1514 10.1109/JQE.2003.819541 0018-9197
-
(2003)
IEEE J. Quantum Electron.
, vol.39
, Issue.12
, pp. 1509-1514
-
-
Tronciu, V.Z.1
Yamada, M.2
Ohno, T.3
Ito, S.4
Kawakami, T.5
Taneya, M.6
-
8
-
-
0018480473
-
A possible model for sustained oscillations (pulsations) in (AlGa)As double heterostructure lasers
-
10.1109/JQE.1979.1070024 0018-9197
-
Dixon, R.W., and Joyce, W.B.: ' A possible model for sustained oscillations (pulsations) in (AlGa)As double heterostructure lasers ', IEEE J. Quantum Electron., 1979, 15, (6), p. 470-474 10.1109/JQE.1979.1070024 0018-9197
-
(1979)
IEEE J. Quantum Electron.
, vol.15
, Issue.6
, pp. 470-474
-
-
Dixon, R.W.1
Joyce, W.B.2
-
9
-
-
0021634323
-
Optical bistability and chaos in a semiconductor laser with a saturable absorber
-
10.1063/1.95120 0003-6951
-
Kawaguchi, H.: ' Optical bistability and chaos in a semiconductor laser with a saturable absorber ', Appl. Phys. Lett., 1984, 45, (12), p. 1264-1266 10.1063/1.95120 0003-6951
-
(1984)
Appl. Phys. Lett.
, vol.45
, Issue.12
, pp. 1264-1266
-
-
Kawaguchi, H.1
-
10
-
-
21544460306
-
Conditions for self-sustained pulsations and bistability in semiconductor lasers
-
10.1063/1.336065 0021-8979
-
Ueno, M., and Lang, R.: ' Conditions for self-sustained pulsations and bistability in semiconductor lasers ', J. Appl. Phys., 1985, 58, (4), p. 1689-1692 10.1063/1.336065 0021-8979
-
(1985)
J. Appl. Phys.
, vol.58
, Issue.4
, pp. 1689-1692
-
-
Ueno, M.1
Lang, R.2
-
11
-
-
0019027616
-
Theory of defect-induced pulsations in semiconductor injection lasers
-
10.1063/1.328092 0021-8979
-
Henry, C.H.: ' Theory of defect-induced pulsations in semiconductor injection lasers ', J. Appl. Phys., 1980, 51, (6), p. 3051-3061 10.1063/1.328092 0021-8979
-
(1980)
J. Appl. Phys.
, vol.51
, Issue.6
, pp. 3051-3061
-
-
Henry, C.H.1
-
12
-
-
0032166978
-
High temperature operation of 650-nm wavelength AlGaInP self-pulsating laser diodes
-
10.1109/68.705595
-
Summers, H.D., and Rees, P.: ' High temperature operation of 650-nm wavelength AlGaInP self-pulsating laser diodes ', IEEE Photon. Technol. Lett., 1998, 10, (9), p. 1217-1219 10.1109/68.705595
-
(1998)
IEEE Photon. Technol. Lett.
, vol.10
, Issue.9
, pp. 1217-1219
-
-
Summers, H.D.1
Rees, P.2
-
13
-
-
4043152738
-
Electron overflow to the AlGaN p-cladding layer in InGaN/GaN/AlGaN MQW laser diodes
-
article 2 1092-5783
-
Domen, K., Soejima, R., Kuramata, A., and Tanahashi, T.: ' Electron overflow to the AlGaN p-cladding layer in InGaN/GaN/AlGaN MQW laser diodes ', MRS Internet J. Nitride Semicond. Res., 1998, 3, article 2 1092-5783
-
(1998)
MRS Internet J. Nitride Semicond. Res.
, vol.3
-
-
Domen, K.1
Soejima, R.2
Kuramata, A.3
Tanahashi, T.4
-
14
-
-
0032622031
-
Quantum well width dependence of threshold current density in InGaN lasers
-
10.1063/1.124336 0003-6951
-
Chow, W.W., Amano, H., Takeuchi, T., and Han, J.: ' Quantum well width dependence of threshold current density in InGaN lasers ', Appl. Phys. Lett., 1999, 75, (2), p. 244-246 10.1063/1.124336 0003-6951
-
(1999)
Appl. Phys. Lett.
, vol.75
, Issue.2
, pp. 244-246
-
-
Chow, W.W.1
Amano, H.2
Takeuchi, T.3
Han, J.4
-
15
-
-
0031153664
-
Well-width dependent studies of InGaN-GaN single-quantum wells using time-resolved photoluminescence techniques
-
10.1109/2944.640628 1077-260X
-
Sun, C.K., Keller, S., Chiu, T.L., Wang, G., Minsky, M.S., Bowers, J.E., and DenBaars, S.P.: ' Well-width dependent studies of InGaN-GaN single-quantum wells using time-resolved photoluminescence techniques ', IEEE J. Sel. Top. Quantum Electron., 1997, 3, (3), p. 731-738 10.1109/2944.640628 1077-260X
-
(1997)
IEEE J. Sel. Top. Quantum Electron.
, vol.3
, Issue.3
, pp. 731-738
-
-
Sun, C.K.1
Keller, S.2
Chiu, T.L.3
Wang, G.4
Minsky, M.S.5
Bowers, J.E.6
Denbaars, S.P.7
-
16
-
-
0029638627
-
Theoretical prediction of GaN lasing and temperature sensitivity
-
10.1063/1.115214 0003-6951
-
Fang, W., and Chuang, S.L.: ' Theoretical prediction of GaN lasing and temperature sensitivity ', Appl. Phys. Lett., 1995, 67, (6), p. 751-753 10.1063/1.115214 0003-6951
-
(1995)
Appl. Phys. Lett.
, vol.67
, Issue.6
, pp. 751-753
-
-
Fang, W.1
Chuang, S.L.2
-
17
-
-
0343367300
-
Characteristics of room temperature-cw operated InGaN multi-quantum-well-structure laser diodes
-
article 5 1092-5783
-
Nakamura, S.: ' Characteristics of room temperature-cw operated InGaN multi-quantum-well-structure laser diodes ', MRS Internet J. Nitride Semicond. Res., 1997, 2, article 5 1092-5783
-
(1997)
MRS Internet J. Nitride Semicond. Res.
, vol.2
-
-
Nakamura, S.1
-
18
-
-
0001775696
-
1-xN as a function of stoichiometry
-
10.1063/1.125964 0003-6951
-
1-xN as a function of stoichiometry ', Appl. Phys. Lett., 2000, 76, (9), p. 1143-1145 10.1063/1.125964 0003-6951
-
(2000)
Appl. Phys. Lett.
, vol.76
, Issue.9
, pp. 1143-1145
-
-
Chung, M.S.1
Miskovsky, N.M.2
Cutler, P.H.3
Kumar, N.4
-
19
-
-
0024104243
-
A model for GRIN-SCH-SQW diode lasers
-
10.1109/3.8562 0018-9197
-
Chinn, S.R., Zory, P.S., and Reisinger, A.R.: ' A model for GRIN-SCH-SQW diode lasers ', IEEE J. Quantum Electron., 1988, 24, (11), p. 2191-2214 10.1109/3.8562 0018-9197
-
(1988)
IEEE J. Quantum Electron.
, vol.24
, Issue.11
, pp. 2191-2214
-
-
Chinn, S.R.1
Zory, P.S.2
Reisinger, A.R.3
-
22
-
-
36449009283
-
Calculation of gain-current characteristics in ZnCdSe-ZnSe quantum well structures including many body effects
-
10.1063/1.115381 0003-6951
-
Rees, P., Logue, F.P., Donegan, J.F., Heffernan, J.F., Jordan, C., and Hegarty, J.: ' Calculation of gain-current characteristics in ZnCdSe-ZnSe quantum well structures including many body effects ', Appl. Phys. Lett., 1995, 67, (25), p. 3780-3782 10.1063/1.115381 0003-6951
-
(1995)
Appl. Phys. Lett.
, vol.67
, Issue.25
, pp. 3780-3782
-
-
Rees, P.1
Logue, F.P.2
Donegan, J.F.3
Heffernan, J.F.4
Jordan, C.5
Hegarty, J.6
-
23
-
-
0001073018
-
Effects of Coulomb enhancement on optical gain in (Zn, Cd)Se/ZnSe multiple quantum wells
-
Logue, F.P., Rees, P., Heffernan, J.F., Jordan, C., Donegan, J.F., Hegarty, J., Hiei, F., and Ishibashi, A.: ' Effects of Coulomb enhancement on optical gain in (Zn, Cd)Se/ZnSe multiple quantum wells ', Phys. Rev. B, Condens. Matter, 1996, 54, (23), p. 16417-16420
-
(1996)
Phys. Rev. B, Condens. Matter
, vol.54
, Issue.23
, pp. 16417-16420
-
-
Logue, F.P.1
Rees, P.2
Heffernan, J.F.3
Jordan, C.4
Donegan, J.F.5
Hegarty, J.6
Hiei, F.7
Ishibashi, A.8
-
24
-
-
0033534876
-
Piezoelectric effects in the optical properties of strained InGaN quantum wells
-
10.1063/1.123370 0003-6951
-
Peng, L.-H., and Chuang, C.-W.: ' Piezoelectric effects in the optical properties of strained InGaN quantum wells ', Appl. Phys. Lett., 1999, 74, (6), p. 795-797 10.1063/1.123370 0003-6951
-
(1999)
Appl. Phys. Lett.
, vol.74
, Issue.6
, pp. 795-797
-
-
Peng, L.-H.1
Chuang, C.-W.2
-
25
-
-
0035683812
-
Power output of 650-nm self-pulsating AlGaInP laser diodes for optical storage applications
-
10.1109/3.970910 0018-9197
-
Jones, D.R., Rees, P., Pierce, I., and Summers, H.D.: ' Power output of 650-nm self-pulsating AlGaInP laser diodes for optical storage applications ', IEEE J. Quantum Electron., 2001, 37, (12), p. 1632-1635 10.1109/3.970910 0018-9197
-
(2001)
IEEE J. Quantum Electron.
, vol.37
, Issue.12
, pp. 1632-1635
-
-
Jones, D.R.1
Rees, P.2
Pierce, I.3
Summers, H.D.4
-
26
-
-
2442464834
-
Effects of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance
-
10.1109/JQE.2004.826437 0018-9197
-
Kuo, Y-K., and Chng, Y-A.: ' Effects of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance ', IEEE J. Quantum Electron., 2004, 40, (5), p. 437-444 10.1109/JQE.2004.826437 0018-9197
-
(2004)
IEEE J. Quantum Electron.
, vol.40
, Issue.5
, pp. 437-444
-
-
Kuo, Y.-K.1
Chng, Y.-A.2
|