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Volumn 148, Issue 1, 2001, Pages 65-68

Investigation of changes in absorber position in the 650 nm AlGaInP self-pulsating laser for optical storage applications

Author keywords

[No Author keywords available]

Indexed keywords

CLADDING (COATING); LIGHT ABSORPTION; OPTICAL DISK STORAGE; PULSED LASER APPLICATIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

EID: 0035247036     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20010103     Document Type: Article
Times cited : (1)

References (9)
  • 4
    • 0000544794 scopus 로고    scopus 로고
    • Thermal limitation of self-pulsation in 650 nm AlGaInP laser diodes with an epitaxially integrated absorber
    • (1997) Appl. Phys. Lett. , vol.71 , Issue.18 , pp. 2665-2667
    • Summers, H.D.1    Rees, P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.