Theoretical optimization of self-pulsating 650-nm-wavelength AlGaInP laser diodes

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 740-744

  Jones, D R ^a   Rees, P ^a   Pierce, I ^a   Summers, H D ^b  

^a BANGOR UNIVERSITY   (United Kingdom)

^b CARDIFF UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; DYNAMICS; GAIN MEASUREMENT; MATHEMATICAL MODELS; OPTIMIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; TEMPERATURE MEASUREMENT;

EPITAXIAL ABSORBER LAYERS; SELF PULSATING LASER DIODES; SEMICONDUCTING ALUMINUM GALLIUM INDIUM PHOSPHIDE;

SEMICONDUCTOR LASERS;

EID: 0033123725     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788445     Document Type: Article

References (8)

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2. R. C. P. Hoskens, T. G. van de Roer, C. J. van der Poel, and H. P. M. Ambrosius, "Self-pulsating lasers with quantum well saturable absorber," Appl. Phys. Lett., vol. 67, no. 10, pp. 1343-1345, 1995.
3. H. Adachi, S. Kamiyama, I. Kidoguchi, and T. Uenoyama, "Self-sustained pulsation in 650-nm-band AlGaInP visible-laser diodes with highly doped saturable absorbing layer," IEEE Photon. Technol. Lett., vol. 7, pp. 1406-1408, Dec. 1995.
4. H. D. Summers and P. Rees, "Thermal limitation of self-pulsation in 650 nm AlGaInP laser diodes with an epitaxially integrated absorber," Appl. Phys. Lett., vol. 71, no. 18, pp. 2665-2667, 1997.
5. _, "High-temperature operation of 650 nm wavelength AlGaInP self-pulsating laser diodes," IEEE Photon. Technol. Lett., vol. 10, pp. 1217-1219, Sept. 1998.
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8. H. D. Summers, C. H. Molloy, P. M. Smowton, P. Rees, I. Pierce, and D. R. Jones, "High temperature self-pulsation in 650 nm, AlGaInP lasers with an epitaxially integrated saturable absorber," in Proc. 16th IEEE Semiconductor Laser Conf., Nara, Japan, 1998, pp. 145-146.