Power output of 650-nm self-pulsating AlGaInP laser diodes for optical storage applications

IEEE Journal of Quantum Electronics

Volumn 37, Issue 12, 2001, Pages 1632-1635

  Jones, D R ^a   Rees, P ^a   Pierce, I ^a   Summers, H D ^b  

^a BANGOR UNIVERSITY   (United Kingdom)

^b CARDIFF UNIVERSITY   (United Kingdom)

Author keywords

Quantum well lasers; Semiconductor lasers

Indexed keywords

COMPUTER SIMULATION; LEAKAGE CURRENTS; OPTICAL DATA STORAGE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING;

SELF-PULSATING LASER DIODES;

QUANTUM WELL LASERS;

EID: 0035683812     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.970910     Document Type: Article

References (8)

1. Self-pulsating lasers with quantum well saturable absorber
2. Self-sustained pulsations in 650-nm-band AlGaInP visible-laser diodes with highly doped saturable absorbing layer
3. Thermal limitation of self-pulsation in 650-nm AlGaInP laser diodes with an epitaxially integrated absorber
4. High temperature operation of 650-nm wavelength AlGaInP self-pulsating laser diodes
5. Theoretical optimization of self-pulsating 650-nm-wavelength AlGaInP laser diodes
6. Experimental analysis of self-pulsation in 650-nm-wavelength AlGaInP laser diodes with epitaxial absorbing layers