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Volumn 86, Issue 21, 2005, Pages 1-13

Enhanced stress relaxation in ultrathin SiGe-on-insulator by H+ -implantation-assisted oxidation

Author keywords

[No Author keywords available]

Indexed keywords

CONDENSATION; ELECTRIC INSULATORS; ION IMPLANTATION; IRRADIATION; OXIDATION; STRESS RELAXATION;

EID: 20844434633     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1935028     Document Type: Article
Times cited : (15)

References (13)
  • 10
    • 0003679027 scopus 로고
    • edited by S. M.Sze (McGraw-Hill, New York
    • M. D. Giles, VLSI Technology, 2nd ed., edited by, S. M. Sze, (McGraw-Hill, New York, 1988).
    • (1988) VLSI Technology, 2nd ed.
    • Giles, M.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.