High-performance 1.3μm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature

IEE Proceedings: Optoelectronics

Volumn 153, Issue 6, 2006, Pages 280-283

  Jin, C Y ^a   Liu, H Y ^a   Badcock, T J ^a   Groom, K M ^a   Gutierrez M ^b   Royce, R ^a   Hopkinson, M ^a   Mowbray, D J ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b UNIVERSITY OF CÁDIZ   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; MULTILAYERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

HIGH-REFLECTION (HR) COATING; QUANTUM-DOT (QD) LASERS; ROOM-TEMPERATURE;

QUANTUM WELL LASERS;

EID: 33751321076     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20060048     Document Type: Conference Paper

References (16)

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