CMP characteristics and optical property of ITO thin film by using silica slurry with a variety of process parameters

Microelectronic Engineering

Volumn 83, Issue 11-12, 2006, Pages 2213-2217

  Choi, Gwon Woo ^a   Lee, Kang Yeon ^a   Kim, Nam Hoon ^a   Park, Jin Seong ^a   Seo, Yong Jin ^b   Lee, Woo Sun ^a  

^a Chosun University   (South Korea)

^b Daebul University   (South Korea)

Author keywords

Chemical mechanical polishing (CMP); Indium tin oxide (ITO); Optical transmittance; Process parameters; Removal rate; Within wafer non uniformity (WIWNU )

Indexed keywords

CHEMICAL MECHANICAL POLISHING; ELECTRODES; OPACITY; SILICA; SILICON WAFERS; SLURRIES;

INDIUM TIN OXIDE (ITO); PROCESS PARAMETERS; REMOVAL RATE; WITHIN-WAFER NON-UNIFORMITY (WIWNU%);

THIN FILMS;

EID: 33751227546     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.10.006     Document Type: Article

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