SCOPUS 정보 검색 플랫폼

Volumn 83, Issue 3, 2006, Pages 506-512

Design of experiment (DOE) method considering interaction effect of process parameters for optimization of copper chemical mechanical polishing (CMP) process

(4) Kim, Nam Hoon a Choi, Min Ho b Kim, Sang Yong c Chang, Eui Goo b

a Chosun University (South Korea)

b Chung Ang University (South Korea)

c DongbuAnam Semiconductor (South Korea)

Author keywords

Back pressure; Chemical mechanical polishing (CMP); Copper; Design of experiment (DOE); Down force; Edge to center (ETC); Head speed; Interaction effect; Non uniformity; Removal rate; Turntable speed

Indexed keywords

METALLIZING; OPTIMIZATION; PARAMETER ESTIMATION; PROCESS CONTROL; SPEED CONTROL; ULSI CIRCUITS;

DESIGN OF EXPERIMENT (DOE); EDGE TO CENTER (ETC); INTERACTION EFFECT; TURNTABLE SPEED;

CHEMICAL MECHANICAL POLISHING;

EID: 33244456800 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2005.11.016 Document Type: Article

Times cited : (35)

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