Deep-level defects at lattice-mismatched interfaces in GaAs-based heterojunctions

Journal of Physics Condensed Matter

Volumn 12, Issue 49, 2000, Pages 10153-10160

  Wosinski T ^a   Yastrubchak, O ^a   Makosa A ^a   Figielski, T ^a  

^a INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTRON BEAM INDUCED CURRENTS;

HETEROJUNCTIONS;

EID: 0342972880     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/12/49/314     Document Type: Article

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