Temperature dependent EBIC and deep level transient spectroscopy investigation of different types of misfit-dislocations at MOVPE grown GaAs/InGaAs/GaAs-single-quantum wells

Materials Science and Engineering B

Volumn 42, Issue 1-3, 1996, Pages 77-81

  Panepinto, L ^a   Zeimer, U ^b   Seifert, W ^c   Seibt, M ^a   Bugge, F ^b   Weyers, M ^b   Schroter W ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^c IHP   (Germany)

Author keywords

Electron beam; Misfit dislocations; Single quantum wells

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); ELECTRON BEAMS; HETEROJUNCTIONS; INDUCED CURRENTS; METALLORGANIC VAPOR PHASE EPITAXY; PLASTIC DEFORMATION; POINT DEFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

ELECTRON BEAM INDUCED CURRENT (EBIC);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0002069406     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01686-8     Document Type: Article

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