Different approaches to integrate patterned buried CoSi2 layers in SOI substrates

Microelectronic Engineering

Volumn 83, Issue 11-12, 2006, Pages 2112-2116

  Zimmermann, S ^a   Zhao, Q T ^c   Hohnemann H ^d   Wiemer, M ^b   Kaufmann, C ^a   Mantl, S ^c   Dudek, V ^d   Gessner, T ^a,b  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b FRAUNHOFER IZM   (Germany)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

^d Atmel Germany GmbH   (Germany)

Author keywords

BESOI; Buried silicides; Cobalt silicide; SmartCutTM; SOI substrates

Indexed keywords

CMOS INTEGRATED CIRCUITS; ETCHING; HYDROGEN; SILICON WAFERS; SUBSTRATES; THIN FILMS;

BURIED SILICIDES; COBALT SILICIDE; SMARTCUTTM; SOI SUBSTRATES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 33751202730     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.09.015     Document Type: Article

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