Thermal stability of CoSi2 layers implemented in a silicon-on-insulator substrate

Semiconductor Science and Technology

Volumn 21, Issue 2, 2006, Pages 157-161

  Zhao, Q T ^a   Bay, H L ^a   Zimmermann, S ^b   Wiemer, M ^c   Kaufmann, C ^b   Trui, B ^d   Hohnemann H ^d   Dudek, V ^d   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^c FRAUNHOFER IZM   (Germany)

^d Atmel Germany GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEGRADATION; SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

BICMOS APPLICATIONS; SILICON-ON-INSULATOR SUBSTRATES; WAFER BONDING; WAFER SPLITTING;

COBALT COMPOUNDS;

EID: 30744470892     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/2/010     Document Type: Article

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