Fabrication and characterization of buried silicide layers on SOI substrates for BICMOS-applications

Microelectronic Engineering

Volumn 82, Issue 3-4 SPEC. ISS., 2005, Pages 454-459

  Zimmermann, S ^a   Zhao, Q T ^c   Trui, B ^d   Wiemer, M ^b   Kaufmann, C ^a   Mantl, S ^c   Dudek, V ^d   Gessner, T ^a,b  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b FRAUNHOFER IZM   (Germany)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

^d Atmel Germany GmbH   (Germany)

Author keywords

BICMOS; Buried silicides; Cobalt silicide; SOI substrates

Indexed keywords

CMOS INTEGRATED CIRCUITS; COBALT; ELECTRIC CONDUCTIVITY; GRINDING (COMMINUTION); THERMODYNAMIC STABILITY;

BICMOS; BURIED SILICIDES; COBALT SILICIDE; SOI SUBSTRATES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 28044445432     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.07.042     Document Type: Conference Paper

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