Optical and structural investigation on InGaN/GaN multiple quantum well light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6337, Issue , 2006, Pages

  Feng, Z C ^a   Chen, J ^a   Tsai, H ^a   Yang, J ^a   Li, P ^b   Wetzel, C ^b   Detchprohm, T ^b   Nelson, J ^b   Ferguson, I T ^c  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b Uniroyal   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

InGaN GaN; Light emitting diode; Metalorganic chemical vapor deposition; Multiple quantum well; Photoluminescence; Photoluminescence excitation; Transmission electron microscopy; X ray diffraction

Indexed keywords

LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

BAND FILLING EFFECTS; STARK EFFECTS; STOKES SHIFT;

LIGHT EMITTING DIODES;

EID: 33751172524     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.677653     Document Type: Conference Paper

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