메뉴 건너뛰기




Volumn 6322, Issue , 2006, Pages

Electrical conduction through a 2D InP-based photonic crystal

Author keywords

CAIBE; Electrical conduction tuning; InP; Photonic crystals Fermi level pinning dry etching; Surface potential

Indexed keywords

CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; DRY ETCHING; ELECTRIC CONDUCTIVITY; PHOTONS; SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 33751040603     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.680017     Document Type: Conference Paper
Times cited : (4)

References (32)
  • 3
    • 1542375034 scopus 로고    scopus 로고
    • Temperature tuning of the optical properties of planar photonic crystal microcavities
    • B. Wild, R. Ferrini, R. Houdré, M. Mulot, S. Anand, C. J. M. Smith, "Temperature tuning of the optical properties of planar photonic crystal microcavities" Appl. Phys. Lett. 84(6), 846-848, 2004.
    • (2004) Appl. Phys. Lett. , vol.84 , Issue.6 , pp. 846-848
    • Wild, B.1    Ferrini, R.2    Houdré, R.3    Mulot, M.4    Anand, S.5    Smith, C.J.M.6
  • 4
    • 2942717222 scopus 로고    scopus 로고
    • Tuning of photonic crystal waveguide microcavity by thermooptic effect
    • H. M. H. Chong, R. M. De La Rue "Tuning of Photonic crystal waveguide microcavity by thermooptic effect", IEEE Photon. Technol. Lett. 16(6), (2004).
    • (2004) IEEE Photon. Technol. Lett. , vol.16 , Issue.6
    • Chong, H.M.H.1    De La Rue, R.M.2
  • 5
    • 33751037491 scopus 로고    scopus 로고
    • Tuning of photonic crystal cavity by carrier plasma effect
    • Th-L6
    • M. Shiga, K. Inoshita and T. Baba, "Tuning of photonic crystal cavity by carrier plasma effect" Th-L6, PECS-V proceedings, p.242 (2004).
    • (2004) PECS-V Proceedings , pp. 242
    • Shiga, M.1    Inoshita, K.2    Baba, T.3
  • 6
    • 33751046781 scopus 로고    scopus 로고
    • Proposal of line-defect-waveguide laser with transverse current injection structure in "D photonic crystal slab
    • Th-P50
    • A. Sugitatsu and S. Noda, "Proposal of Line-defect-waveguide laser with transverse current injection structure in "D photonic crystal slab" Th-P50, PECS-V proceedings p.230 (2004).
    • (2004) PECS-V Proceedings , pp. 230
    • Sugitatsu, A.1    Noda, S.2
  • 7
    • 27744523787 scopus 로고    scopus 로고
    • Active control of slow light on a chip with photonic crystal waveguides
    • Y. A. Vlasov, M. O'Boyle, H. F. Hamann, S. J. McNab, "Active control of slow light on a chip with photonic crystal waveguides" Nature 438, 65 (2005).
    • (2005) Nature , vol.438 , pp. 65
    • Vlasov, Y.A.1    O'Boyle, M.2    Hamann, H.F.3    McNab, S.J.4
  • 12
    • 2342466114 scopus 로고    scopus 로고
    • Fabrication of two-dimensional InP-based photonic crystals by chlorine based chemically assisted ion beam etching
    • M. Mulot, S. Anand, R. Ferrini, B. Wild, R. Houdré, J. Moosburger, A. Forchel, "Fabrication of two-dimensional InP-based photonic crystals by chlorine based chemically assisted ion beam etching" J. Vac. Sci. Technol. B 22(2), 707-709 (2004).
    • (2004) J. Vac. Sci. Technol. B , vol.22 , Issue.2 , pp. 707-709
    • Mulot, M.1    Anand, S.2    Ferrini, R.3    Wild, B.4    Houdré, R.5    Moosburger, J.6    Forchel, A.7
  • 13
    • 4944245125 scopus 로고    scopus 로고
    • High-aspect-ratio chemically assisted ion-beam etching for photonic crystals using a high beam voltage-current ratio
    • M. V. Kotlyar, L. O'Faolain, R. Wilson and T. Krauss, "High-aspect-ratio chemically assisted ion-beam etching for photonic crystals using a high beam voltage-current ratio" J. Vac. Sci. Technol. B 22 (4), 1788-1791 (2004).
    • (2004) J. Vac. Sci. Technol. B , vol.22 , Issue.4 , pp. 1788-1791
    • Kotlyar, M.V.1    O'Faolain, L.2    Wilson, R.3    Krauss, T.4
  • 14
    • 17344384323 scopus 로고    scopus 로고
    • Deeply etched two-dimensional photonic crystals fabricated on GaAs/AlGaAs slab waveguides by using chemically assisted ion beam etching
    • K. Avary, J.P. Reithmaier, F. Klopf, T. Happ, M. Kamp, A. Forchel, "Deeply etched two-dimensional photonic crystals fabricated on GaAs/AlGaAs slab waveguides by using chemically assisted ion beam etching" Microelectronic Engineering, 61-62 875 (2002).
    • (2002) Microelectronic Engineering , vol.61-62 , pp. 875
    • Avary, K.1    Reithmaier, J.P.2    Klopf, F.3    Happ, T.4    Kamp, M.5    Forchel, A.6
  • 17
    • 36149024384 scopus 로고
    • Physical theory of semiconductor surfaces
    • C. G. B. Garrett and W. H. Brattain,"Physical theory of semiconductor surfaces" Phys. Rev. 99(2), 376-387, (1995).
    • (1995) Phys. Rev. , vol.99 , Issue.2 , pp. 376-387
    • Garrett, C.G.B.1    Brattain, W.H.2
  • 18
    • 36149025707 scopus 로고
    • Surface states and rectification at a metal-semiconductor contact
    • J. Bardeen, "Surface states and rectification at a metal-semiconductor contact" Phys.Rev 71, 717 (1947).
    • (1947) Phys. Rev , vol.71 , pp. 717
    • Bardeen, J.1
  • 20
    • 0005230288 scopus 로고    scopus 로고
    • Model for trap filling and avalanche breakdown in semi-insulating Fe:InP
    • P. J. Corvini, J. E. Bowers "Model for trap filling and avalanche breakdown in semi-insulating Fe :InP", J. Appl. Phys. 82(1), 259-269, (1997).
    • (1997) J. Appl. Phys. , vol.82 , Issue.1 , pp. 259-269
    • Corvini, P.J.1    Bowers, J.E.2
  • 21
    • 33751033527 scopus 로고
    • Electrical characteristics of the InP surface
    • D. L. Lile, D. A. Collins, "Electrical characteristics of the InP surface" J. Vac. Sci. Technol. 13(4), 868, (1976).
    • (1976) J. Vac. Sci. Technol. , vol.13 , Issue.4 , pp. 868
    • Lile, D.L.1    Collins, D.A.2
  • 22
    • 0026622321 scopus 로고
    • Electron transport in InP under high electric field conditions
    • T. Gonzales Sanchez, J.E. Velazquez Perez, P.M. Gutierrez Conde, D. Pardo, "Electron transport in InP under high electric field conditions", Semicond. Sci. Technol. 7(1), 31-36, 1992.
    • (1992) Semicond. Sci. Technol. , vol.7 , Issue.1 , pp. 31-36
    • Sanchez, T.G.1    Perez, J.E.V.2    Conde, P.M.G.3    Pardo, D.4
  • 23
    • 0020193772 scopus 로고
    • Semiconducting and other major properties of gallium arsenide
    • J.S.Blakemore, "Semiconducting and other major properties of gallium arsenide" J.Appl. Phys 53(10), R123-R181, 1982.
    • (1982) J. Appl. Phys , vol.53 , Issue.10
    • Blakemore, J.S.1
  • 27
    • 0028483563 scopus 로고
    • Optimization of the carrier-induced effective index change in InGaAsP waveguides-application to tunable Bragg filters
    • J.-P. Weber "Optimization of the carrier-induced effective index change in InGaAsP waveguides-Application to tunable Bragg filters", IEEE J. Quant. Electron. 30(8), 1801-1816 (1994).
    • (1994) IEEE J. Quant. Electron. , vol.30 , Issue.8 , pp. 1801-1816
    • Weber, J.-P.1
  • 30
    • 85069342587 scopus 로고
    • Surface defects and Fermi-level pinning in InP
    • J. D. Dow and R. E. Allen, "Surface defects and Fermi-level pinning in InP" J. Vac. Sci. Technol. 20(3), 659661 (1982).
    • (1982) J. Vac. Sci. Technol. , vol.20 , Issue.3 , pp. 659661
    • Dow, J.D.1    Allen, R.E.2
  • 31
    • 0018520371 scopus 로고
    • Metal contacts to silicon and indium-phosphide-cleaved surfaces and the influence of intermediate adsorbed layers
    • R.H.Williams, R. R. Varma, V.Montgomery, "Metal contacts to silicon and indium-phosphide-cleaved surfaces and the influence of intermediate adsorbed layers" J. Vac. Sci. Technol. 16(5), 1418-1421 (1979).
    • (1979) J. Vac. Sci. Technol. , vol.16 , Issue.5 , pp. 1418-1421
    • Williams, R.H.1    Varma, R.R.2    Montgomery, V.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.