Investigation of transparent and conductive undoped Zn 2In 2O 5-x films deposited on n-type GaN layers

Journal of Applied Physics

Volumn 92, Issue 1, 2002, Pages 274-280

  Lo, Cheng Yao ^a   Hsu, Che Lung ^a   Yu, Qing Xuan ^b   Lee, Hsin Ying ^a   Lee, Ching Ting ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL RESISTIVITY; GAN LAYERS; HIGH TRANSPARENCY; MULTI-COMPONENT OXIDES; OHMIC PERFORMANCE; POST DEPOSITION ANNEALING; RESISTIVITY VARIATION; RF-POWER; RF-SPUTTERING; SPUTTERING PARAMETERS; TOTAL PRESSURE; TRANSMITTANCE MEASUREMENTS; VISIBLE AND NEAR INFRARED;

ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; GALLIUM NITRIDE; OPTICAL PROPERTIES; OXIDE FILMS;

ZINC;

EID: 0036640189     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1481207     Document Type: Article

References (27)

1. Q. Chen, J. W. Yang, A. Osinsky, S. Gangopadhyay, B. Lim, M. Z. Anwar, M. Asif Khan, Appl. Phys. Lett. 70, 2277 (1997). apl APPLAB 0003-6951
2. S. J. Pearton, J. C. Zolper, R. J. Shul, F. Ren, J. Appl. Phys. 86, 1 (1999). jap JAPIAU 0021-8979
3. C. T. Lee and H. W. Kao, Appl. Phys. Lett. 76, 2364 (2000). apl APPLAB 0003-6951
4. C. T. Lee, M. H. Lan, C. D. Tsai, Solid-State Electron. 41, 1715 (1997). sel SSELA5 0038-1101
5. G. T. Dand et al., IEEE Trans. Electron Devices 47, 692 (2000). etd IETDAI 0018-9383
6. I. Hamberg and C. G. Granqvist, J. Appl. Phys. 60, R123 (1986). jap JAPIAU 0021-8979
7. T. Feng, A. K. Ghosh, C. Fishman, Appl. Phys. Lett. 35, 266 (1979). apl APPLAB 0003-6951
8. C. T. Lee, C. H. Fu, C. D. Tsai, W. Lin, J. Electron. Mater. 27, 1017 (1998). jem JECMA5 0361-5235
9. T. Tsuji and M. Hirohashi, Appl. Surf. Sci. 157, 47 (2000). asu ASUSEE 0169-4332
10. C. T. Lee, Q. X. Yu, B. T. Tang, H. Y. Lee, F. T. Huang, Appl. Phys. Lett. 78, 3412 (2001). apl APPLAB 0003-6951
11. W. Gao, P. R. Berger, G. J. Zydyik, H. M. O'Bryan, D. H. Sivco, A. Y. Cho, IEEE Trans. Electron Devices 44, 2174 (1997). etd IETDAI 0018-9383
12. C. D. Tsai, C. H. Fu, Y. J. Lin, C. T. Lee, Solid-State Electron. 43, 665 (1999). sel SSELA5 0038-1101
13. J. W. Seo, A. A. Ketterson, D. G. Ballegeer, K. Y. Cheng, I. Adesida, X. Li, T. Gassert, IEEE Photonics Technol. Lett. 4, 888 (1992). ptl IPTLEL 1041-1135
14. T. Minami, T. Kakumu, H. Sonohara, Thin Solid Films 270, 22 (1995). tsf THSFAP 0040-6090
15. M. Phillips et al., Appl. Phys. Lett. 67, 2246 (1995). apl APPLAB 0003-6951
16. T. Minami, T. Kakumu, S. Takata, J. Vac. Sci. Technol. A 14, 1704 (1996). jva JVTAD6 0734-2101
17. D. D. Edwards, T. D. Mason, F. Goutenoire, K. R. Poeppelmeier, Appl. Phys. Lett. 70, 1706 (1997). apl APPLAB 0003-6951
18. H. Hiramatsu, W. S. Seo, K. Koumoto, Chem. Mater. 10, 3033 (1998). cma CMATEX 0897-4756
19. T. Minami, J. Vac. Sci. Technol. A 17, 1765 (1999). jva JVTAD6 0734-2101
20. Y. Yan, S. J. Pennycook, J. Dai, R. P. H. Chang, A. Wang, T. J. Marks, Appl. Phys. Lett. 73, 2585 (1998). apl APPLAB 0003-6951
21. Y. J. Lin, C. D. Tsai, Y. T. Lyu, C. T. Lee, Appl. Phys. Lett. 77, 687 (2000). apl APPLAB 0003-6951
22. Y. J. Lin and C. T. Lee, Appl. Phys. Lett. 77, 3986 (2000). apl APPLAB 0003-6951
23. D. K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1990).
24. K. Tominaga, T. Murayama, I. Mori, T. Okamoto, K. Hiruta, T. Moriga, I. Nakabayashi, Vacuum 59, 546 (2000). vac VACUAV 0042-207X
25. P. Nunes, E. Fortunato, N. Martins, Thin Solid Films 383, 277 (2001). tsf THSFAP 0040-6090
26. H. L. Hartnagel, A. L. Dawar, A. K. Jain, C. Jagadish, Semiconducting Transparent Thin Films (Institute of Physics, Bristol, 1995).
27. P. P. Budnikov and A. M. Ginstling, Principles of Solid State Chemistry (Maclaren and Sons Ltd., London, 1968).