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Volumn 515, Issue 4, 2006, Pages 2366-2372

Charge trapping and carrier transport mechanism in silicon-rich silicon oxynitride

Author keywords

Carrier transport mechanism; Charge trapping; Silicon nanodots; Silicon rich silicon oxynitride

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; NANOSTRUCTURED MATERIALS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 33750831835     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.04.009     Document Type: Article
Times cited : (12)

References (18)
  • 11
    • 33750842762 scopus 로고    scopus 로고
    • M. Kevin, Walsh, University of Louisville Standard Operating Procedures, http://mitghmr.spd.louisville.edu/lutz/resources/sops/.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.