Melting and crystallization behavior of low-pressure chemical-vapor-deposition amorphous Si films during excimer-laser annealing

Journal of Applied Physics

Volumn 95, Issue 5, 2004, Pages 2873-2879

  Voogt, F C ^a,c   Ishihara, R ^a   Tichelaar, F D ^b  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DEFECTS; ELECTRIC CONDUCTIVITY; EXCIMER LASERS; GRAIN BOUNDARIES; GROWTH (MATERIALS); ION IMPLANTATION; LIGHT REFLECTION; MELTING; SILICON; SPECTRUM ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

EXCIMER LASER ANNEALING (ELA); TIME-RESOLVED OPTICAL REFLECTIVITY (TROR);

AMORPHOUS FILMS;

EID: 1642379544     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1642286     Document Type: Article

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