Pulsed laser crystallization of a-Si:H on glass: A comparative study of 1064 and 532 nm excitation

Physica Status Solidi (A) Applied Research

Volumn 166, Issue 2, 1998, Pages 635-641

  Carius, R ^a   Wohllebe, A ^a   Houben, L ^a   Wagner, H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTAL STRUCTURE; CRYSTALLIZATION; GLASS; MELTING; NEODYMIUM LASERS; PULSED LASER APPLICATIONS; RAMAN SPECTROSCOPY; STRAIN; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

TENSILE STRAIN;

AMORPHOUS FILMS;

EID: 0032048478     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199804)166:2<635::AID-PSSA635>3.0.CO;2-H     Document Type: Review

References (11)

1. see e.g. Mater. Res. Soc. Symp. Proc. Vol. 377 (1997) and Vol. 468 (1998).
2. see e.g. Mater. Res. Soc. Symp. Proc. Vol. 377 (1997) and Vol. 468 (1998).
3. W.B. JACKSON, N.M. JOHNSON, and D.K. BIEGELSEN, Appl. Phys. Lett. 43, 195 (1983).
4. S.E. READY, J.B. BOYCE, D.K. FORK, P. MEI, G.B. ANDERSON, and R.I. JOHNSON, Mater. Res. Soc. Symp. Proc. 297, 545 (1993).
5. T. SAMESHIMA, Solid State Phenom. 37/38, 269 (1994).
6. T. MATSUYAMA, N. TERADA, T. BABA, T. SAVADA, S. TSUGE, K. WAKISSAKA, and S. TSUDA, J. Non-Cryst. Solids 198/200, 940 (1996).
7. J. MEIER, R. FLÜCKINGER, H. KEPPNER, and A. SHAH, Appl. Phys. Lett. 65, 860 (1994).
8. J.M. POATE and J.W. MAYER, Laser Annealing of Semiconductors, Academic Press, New York 1982.
9. I. DE WOLF, J. VANHELLEMONT, A. ROMANO-RODRIGUES, H. NORTSTRÖM, and H. E. MAES, J. Appl. Phys. 71, 898 (1992).
10. S. VEPREK, F.-A. SARROT, and Z. IQBAL, Phys. Rev. B 36, 3344 (1987).
11. A. WOHLLEBE, R. CARIUS, L. HOUBEN, A. KLATT, J. KLOMFASS, and H. WAGNER, Proc. 17th Internat. Conf. Amorphous and Microcrystalline Semiconductors, Hungaria, 1997, in print.