Flat and large poly-Si grains by a continuous process of plasma-enhanced chemical vapor deposition of a-Si and its direct laser crystallization

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 8 A, 2000, Pages

  Mimura, Akio ^a   Shinagawa, Youmei ^a   Kawachi, Genshirou ^a   Onisawa, Kenichi ^a   Minemura, Tetsurou ^a   Hara, Masayuki ^b   Ishida, Takeshige ^b   Takeda, Tomohiko ^b  

^a HITACHI LTD   (Japan)

^b HITACHI KOKUSAI ELECTRIC INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLIZATION; DEHYDROGENATION; GRAIN SIZE AND SHAPE; LASER APPLICATIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SUBSTRATES; SURFACE ROUGHNESS; THIN FILM TRANSISTORS;

DIRECT LASER CRYSTALLIZATION;

SEMICONDUCTING SILICON;

EID: 0034249579     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l779     Document Type: Article

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