A comparison of bulk lifetime, efficiency, and light-induced degradation in boron- and gallium-doped cast mc-Si solar cells

IEEE Transactions on Electron Devices

Volumn 53, Issue 11, 2006, Pages 2764-2772

  Sheoran, Manav ^a   Upadhyaya, Ajay ^b   Rohatgi, Ajeet ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Light induced degradation (LID); Minority carrier lifetime; Multicrystalline silicon (mc Si); Photovoltaic cell efficiency

Indexed keywords

EFFICIENCY; MATHEMATICAL MODELS; PHOTODEGRADATION; PHOTOVOLTAIC CELLS; SEMICONDUCTING BORON; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; SILICON WAFERS;

CARRIER LIFETIME; LIGHT-INDUCED DEGRADATION; MULTICRYSTALLINE SILICON;

SILICON SOLAR CELLS;

EID: 33750593627     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.883675     Document Type: Article

References (27)

1. D. Karg, G. Pensl, M. Schulz, C. Hassler, and W. Koch, "Oxygen-related defect centers in solar-grade, multicrystalline silicon. A reservoir of lifetime killers," Phys. Stat. Sol., B, vol. 222, no. 1, pp. 379-387, Oct. 2000.
2. M. Ghosh, D. Yang, A. Lawerenz, S. Riedel, and H. J. Moller, "Investigation of minority carrier lifetime degradation in multicrystalline silicon," in Proc. 14th Eur. Photovoltaic Solar Energy Conf., Barcelona, Spain, Jul. 1997, pp. 724-727.
3. A. Bentzen, H. Tathgar, R. Kopecek, R. Sinton, and A. Holt, "Recombination lifetime and trap density variations in multicrystalline silicon wafers through the block," in Proc. 31st IEEE Photovoltaic Spec. Conf., Orlando, FL, Jan. 2005, pp. 1074-1077.
4. D. Macdonald, A. Cuevas, A. Kinomura, Y. Nakano, and L. J. Geerligs, "Transition-metal profiles in a multicrystalline silicon ingot," J. Appl. Phys., vol. 97, no. 3, p. 033523, Feb. 2005.
5. D. Macdonald, A. Cuevas, and F. Ferrazza, "Response to phosphorous gettering of different regions of cast multicrystalline silicon ingots," Solid State Electron., vol. 43, no. 3, pp. 575-581, Mar. 1999.
6. M. Stocks, A. Cuevas, and A. Blakers, "Minority carrier lifetimes of multicrystalline silicon during solar cell processing," in Proc. 14th Eur. Photovoltaic Solar Energy Conf., Barcelona, Spain, Jul. 1997, pp. 770-773.
7. A. Azzizi, L. J. Geerligs, and A. R. Burgers, "Analysis of cell-process induced changes in multicrystalline silicon," in Proc. 3rd World Conf. Photovoltaic Energy Convers., Osaka, Japan, May 2003, pp. 1384-1387.
8. L. J. Geerligs, "Impact of defect distribution and impurities on multicrystalline silicon cell efficiency," in Proc. 3rd World Conf. Photovoltaic Energy Convers., Osaka, Japan, May 2003, pp. 1044-1047.
9. A. Rohatgi, A. Upadhyaya, and M. Sheoran, "High-efficiency screen printed belt co-fired solar cells on cast multicrystalline silicon," Appl. Phys. Lett., vol. 86, no. 5, p. 054103, Jan. 2005.
10. H. M'saad, J. Michel, A. Reddy, and L. C. Kimerling, "Monitoring and optimization of silicon surface quality," J. Electrochem. Soc., vol. 142, no. 8, pp. 2833-2835, Aug. 1995.
11. R. A. Sinton and A. Cuevas, "Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data," Appl. Phys. Lett., vol. 69, no. 17, pp. 2510-2512, Oct. 1996.
12. J. Brody, A. Rohatgi, and V. Yelundur, "Bulk resistivity optimization for low bulk-lifetime silicon solar cells," Prog. Photovolt., vol. 9, no. 4, pp. 273-285, Feb. 2001.
13. P. A. Basore and D. A. Clugston, PC1D V5.6. Sydney, Australia: Univ. New South Wales, 1998.
14. J. Henze, P. Pohl, C. Schmiga, M. Dhamrin, T. Saitoh, I. Yamaga, and J. Schmidt, "Millisecond area-averaged lifetimes in gallium-doped multicrystalline silicon," in Proc. 20th Eur. Photovoltaic Solar Energy Conf., Barcelona, Spain, Jun. 2005, pp. 769-772.
15. D. Yang, L. Li, X. Ma, R. Fan, D. Que, and H. J. Moeller, "Oxygen-related centers in multicrystalline silicon," Sol. Energy Mater. Sol. Cells, vol. 62, no. 1, pp. 37-42, Apr. 2000.
16. H. J. Möller, L. Long, M. Werner, and D. Yang, "Oxygen and carbon precipitation in multicrystalline solar silicon," Phys. Stat. Sol., vol. 171, no. 1, pp. 175-189, Jan. 1999.
17. D. Yang and H. J. Möeller, "Effect of heat treatment on carbon in multicrystalline silicon," Sol. Energy Mater. Sol. Cells, vol. 72, no. 1, pp. 541-549, Apr. 2002.
18. C. Cabanel and J. Y. Laval, "Localization of the electrical activity of structural defects in polycrystalline silicon," J. Appl. Phys., vol. 67, no. 3, pp. 1425-1432, Feb. 1990.
19. J. Schmidt and A. Cuevas, "Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon," J. Appl. Phys., vol. 86, no. 6, pp. 3175-3180, Sep. 1999.
20. T. Saitoh, H. Hashigami, S. Rein, and S. Glunz, "Overview of light degradation research on crystalline silicon solar cells," Prog. Photovolt., vol. 8, no. 5, pp. 537-547, Nov. 2000.
21. S. W. Glunz, S. Rein, J. Y. Lee, and W. Warta, "Minority carrier lifetime degradation in boron-doped Czochralski silicon," J. Appl. Phys., vol. 90, no. 5, pp. 2397-2404, Sep. 2001.
22. J. Schmidt, K. Bothe, and R. Hezel, "Formation and annihilation of the metastable defect in boron-doped Czochralski silicon," in Proc. 29th IEEE Photovoltaic Spec. Conf., New Orleans, LA, May 2002, pp. 178-181.
23. J. Schmidt and K. Bothe, "Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon," Phys. Rev. B, Condens. Matter, vol. 69, no. 2, p. 024107, Jan. 2004.
24. J. H. Nagel, J. Schmidt, A. G. Aberle, and R. Hezel, "Exceptionally high bulk minority-carrier lifetimes in block-cast multicrystalline silicon," in Proc. 14th Eur. Photovoltaic Solar Energy Conf., Barcelona, Spain, Jun. 1997, pp. 762-765. (Stephens, Bedford).
25. M. Dhamrin, H. Hashigami, and T. Saitoh, "Elimination of light-induced degradation with gallium-doped multicrystalline silicon wafers," Prog. Photovolt., vol. 11, no. 4, pp. 231-236, May 2003.
26. J. Schmidt, A. G. Aberle, and R. Hezel, "Investigation of carrier lifetime instabilities in Cz-grown silicon," in Proc. 29th IEEE Photovoltaic Spec. Conf., Anaheim, CA, Sep. 1997, pp. 13-18.
27. Y. Kayamori, M. Dhamrin, H. Hashigami, and T. Saitoh, "Rapid initial light-induced degradation of multicrystalline silicon solar cells," in Proc. 3rd World Conf. Photovoltaic Energy Convers., Osaka, Japan, May 2003, pp. 1511-1514.