SCOPUS 정보 검색 플랫폼

Applied Surface Science

Volumn 253, Issue 1 SPEC. ISS., 2006, Pages 188-193

Crystallite misorientation analysis in semiconductor wafers and ELO samples by rocking curve imaging

(5) Mikulik P a Lubbert D b,c Pernot, P b,d Helfen, L b,d Baumbach, T e

a MASARYK UNIVERSITY (Czech Republic)

b KARLSRUHE INSTITUTE OF TECHNOLOGY (Germany)

c HUMBOLDT UNIVERSITY (Germany)

d EUROPEAN SYNCHROTRON RADIATION FACILITY (France)

e FRAUNHOFER INSTITUTE FOR NON DESTRUCTIVE TESTING (Germany)

Author keywords

Crystal growth; GaAs; GaN; Microdiffraction; Microstructure; X ray diffraction; X ray topography

Indexed keywords

CRYSTAL GROWTH; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; MICROSTRUCTURE; SEMICONDUCTING GALLIUM ARSENIDE; SYNCHROTRON RADIATION; X RAY DIFFRACTION;

HISTOGRAMS; MICROCRYSTALLINITY; MICRODIFFRACTION; X-RAY TOPOGRAPHY;

SEMICONDUCTOR MATERIALS;

EID: 33750519886 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2006.05.084 Document Type: Article

Times cited : (13)

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