μm-resolved high resolution X-ray diffraction imaging for semiconductor quality control

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 160, Issue 4, 2000, Pages 521-527

  Lubbert D ^a,c   Baumbach, T ^b,c   Hartwig J ^c   Boller, E ^c   Pernot, E ^d  

^a FRAUNHOFER INSTITUTE FOR NONDESTRUCTIVE TESTING IZFP   (Germany)

^b FRAUNHOFER INSTITUTE FOR NON DESTRUCTIVE TESTING   (Germany)

^c EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^d Grenoble INP Phelma   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; NONDESTRUCTIVE EXAMINATION; QUALITY CONTROL; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; SURFACE STRUCTURE; X RAY RADIOGRAPHY;

LATTICE TILT MAPPING; X RAY DIFFRACTION IMAGING;

X RAY DIFFRACTION ANALYSIS;

EID: 0034174017     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00619-9     Document Type: Article

References (6)

1. B. Jenichen, R. Köhler, in: Proceedings of RöTo 1988, Clausthal, Germany, 1988, p. 132
2. Goorsky M.S., Matney K., Meshkinpour M., Streit D., Block T. Il Nuovo Cimento D. 19:1997;257.
3. Ferrari C., Korytar D., Kumar J. Il Nuovo D. 19:1997;165.
4. Labiche J.-C., Segura-Puchades J., van Brussel D., Moy J. ESRF Newsletter. 25:1996;41.
5. Lely J. Ber. Deut. Keram. Ges. 32:1955;229.
6. Tairov Y., Tsvetkov V. J. Crystal Growth. 43:1978;209.