Numerical simulation of radiation damage effects in p-type and n-type FZ silicon detectors

IEEE Transactions on Nuclear Science

Volumn 53, Issue 5, 2006, Pages 2971-2976

  Petasecca, M ^a,b   Moscatelli, F ^a,b,c   Passeri, D ^a,b   Pignatel, G U ^a,b  

^a UNIVERSITY OF PERUGIA   (Italy)

^b INFN SEZIONE DI PERUGIA   (Italy)

^c CNR   (Italy)

Author keywords

Device simulation; Particle physics; Radiation damage effects

Indexed keywords

DENSITY MEASUREMENT (OPTICAL); DOPING (ADDITIVES); HIGH ENERGY PHYSICS; IRRADIATION; LEAKAGE CURRENTS; NUMERICAL METHODS; RADIATION DAMAGE; SILICON; SIMULATORS;

CHARGE COLLECTION EFFICIENCY; DEVICE SIMULATION; IRRADIATED DETECTORS; SYNOPSYS T-CAD DEVICE;

DETECTORS;

EID: 33750384968     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.881910     Document Type: Article

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