TCAD-based analysis of radiation-hardness in silicon detectors

IEEE Transactions on Nuclear Science

Volumn 45, Issue 3, 1998, Pages 602-608

  Passeri, D ^a   Baroncini, M ^a   Ciampolini, P ^a   Bilei, G M ^a   Santocchia, A ^a   Checcucci, B ^a   Fiandrini, E ^a  

^a UNIVERSITY OF PERUGIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED ANALYSIS; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; COMPUTER SOFTWARE; MATHEMATICAL MODELS; MICROSTRIP DEVICES; NEUTRON IRRADIATION; NEUTRONS; RADIATION HARDENING;

DEEP LEVEL RECOMBINATION CENTER; HIGHER ORDER MODEL; RADIATION HARDNESS; SILICON MICROSTRIP DETECTOR; SOFTWARE PACKAGE HFIELDS; TECHNOLOGY COMPUTER AIDED DESIGN;

RADIATION DETECTORS;

EID: 0032099386     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.682456     Document Type: Article

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