The Si(001)/C2H2 interaction to form a buffer layer for 3C-SiC growth

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 2, 2004, Pages 245-248

  Goryachko, A ^a   Yeromenko, Y ^a   Henkel, K ^a   Wollweber, J ^b   Schmeisser D ^a  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON MOBILITY; ETCHING; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; OXIDATION; PROFILOMETRY; SURFACE ROUGHNESS; SYNCHROTRON RADIATION; X RAY PHOTOELECTRON SPECTROSCOPY; DIFFUSION; GRAPHITE; OLEFINS; SILICON CARBIDE; SILICON WAFERS; ULTRAHIGH VACUUM;

BUFFER LAYERS; GROWTH RATES; PHOTON ENERGY;

SILICON COMPOUNDS; SILICON;

BUFFER LAYERS; CHEMICAL STATES; PHOTON ENERGIES; ROOT MEAN SQUARE (RMS) ROUGHNESS;

EID: 2342527187     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200303914     Document Type: Conference Paper

References (7)

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