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Volumn 134, Issue 2-3 SPEC. ISS., 2006, Pages 244-248

Stress induced anisotropy of vacancy interaction and clustering in uniaxially loaded Si monocrystal

Author keywords

Cluster; Silicon; Strain; Vacancy

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; MONTE CARLO METHODS; SILICON; STRAIN; STRESS ANALYSIS;

EID: 33750351273     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.07.006     Document Type: Article
Times cited : (6)

References (28)
  • 27
    • 0004200984 scopus 로고
    • Pantelides S.T. (Ed), Gordon and Breach, New York
    • Watkins G.D. In: Pantelides S.T. (Ed). Deep Centers in Semiconductors (1986), Gordon and Breach, New York 147
    • (1986) Deep Centers in Semiconductors , pp. 147
    • Watkins, G.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.