Dielectric characteristics of A1N films grown by d.c.-magnetron sputtering discharge

Diamond and Related Materials

Volumn 10, Issue 3-7, 2001, Pages 1317-1321

  Oliveira, I C ^a   Massi, M ^a,b   Santos, S G ^c   Otani, C ^a   Maciel, H S ^a   Mansano, R D ^c  

^a INSTITUTO TECNOLÓGICO DE AERONÁUTICA   (Brazil)

^b Universidade Braz Cubas   (Brazil)

^c UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

Aluminuim nitride; Fowler Nordheim injection; Magnetron sputtering; MIS capacitor

Indexed keywords

ALUMINUM; CAPACITORS; MAGNETRON SPUTTERING; SILICON; SILICON WAFERS; THERMAL EFFECTS; X RAY DIFFRACTION;

CAPACITENCE-VOLTAGE MEASUREMENTS;

THIN FILMS;

ALUMINUM NITRIDE;

EID: 0035269499     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(00)00596-3     Document Type: Article

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