Fabrication and characterization of MOS devices on 3C-SiC films grown by reactive magnetron sputtering on Si (111) substrates

Thin Solid Films

Volumn 287, Issue 1-2, 1996, Pages 252-257

  Wahab, Q ^a   Turan, R ^a,b   Hultman, L ^a   Willander, M ^a   Sundgren, J E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Metal oxide semiconductor structure; Silicon carbide; Sputtering; Transmission electron microscopy

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CAPACITANCE; CHARACTERIZATION; FILM GROWTH; INTERFACES (MATERIALS); MAGNETRON SPUTTERING; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON CARBIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

CUBIC SILICON CARBIDE FILMS; DRY OXIDATION; INTERFACE STATE DENSITY;

MOS DEVICES;

EID: 0030262615     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)08788-3     Document Type: Article

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