Hydrogen penetration into silicon during wet-chemical etching

Microelectronic Engineering

Volumn 66, Issue 1-4, 2003, Pages 320-326

  Weber, J ^a   Knack, S ^a   Feklisova, O V ^b   Yarykin, N A ^b   Yakimov, E B ^b  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

Author keywords

Hydrogen; Schottky diodes; Silicon; Wet chemical etching

Indexed keywords

COMPLEXATION; DIFFUSION; ELECTRIC CHARGE; EXTRAPOLATION; HYDROGEN; SCHOTTKY BARRIER DIODES; SILICON;

WET-CHEMICAL ETCHING;

ETCHING;

EID: 0037394838     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00926-7     Document Type: Conference Paper

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