Magic number vacancy aggregates in Si and GaAs - structure and positron lifetime studies

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 501-504

  Staab, T E M ^a   Haugk, M ^b   Sieck, A ^b   Frauenheim, Th ^b   Leipner, H S ^c  

^a AALTO UNIVERSITY   (Finland)

^b UNIVERSITY OF PADERBORN   (Germany)

^c MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFORMATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON;

MAGIC NUMBER VACANCY CLUSTERS; POSITRON ANNIHILATION SPECTROSCOPY;

CRYSTAL DEFECTS;

EID: 0033357796     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00537-2     Document Type: Article

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