Luminescence study on Ge islands as stressors on Si1 - XGex/Si quantum well

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 519-523

  Kim, E S ^a   Usami, N ^a   Sunamura, H ^a   Fukatsu, S ^b   Shiraki, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Lateral bandgap modulation; Photoluminescence; Self assembled islands; SiGe; Stressor

Indexed keywords

DOPPLER EFFECT; ENERGY GAP; EXCITONS; PHOTOLUMINESCENCE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; STRAIN;

MODULATED QUANTUM STRUCTURES (MQS);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031146251     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00991-8     Document Type: Article

References (13)

1. R.A. Soref, Proc. IEEE 81 (1993) 1687.
2. F.H. Pollak, in: Semiconductors and Semimetals, Vol. 32, Ed. T.P. Pearsall (Academic Press, New york, 1990) p. 17.
3. D.J. Eaglesman and M. Cerullo, Phys. Rev. Lett. 65 (1990) 1934.
4. S. Christiansen, M. Albrecht, H.P. Strunk and H.J. Maier, Appl. Phys. Lett. 64 (1994) 3617.
5. N. Usami, H. Sunamura, T. Mine, S. Fukatsu and Y. Shiraki, J. Crystal Growth 150 (1995) 1065.
6. K. Kash, J. Lumin. 46 (1990) 69.
7. H. Sunamura, N. Usami, S. Fukatsu and Y. Shiraki, Appl. Phys. Lett. 66 (1995) 3024.
8. J. Weber and M.I. Alonso, Phys. Rev. B 40 (1989) 5683.
9. E.S. Kim, N. Usami and Y. Shiraki, unpublished.
10. Z. Xu and P.M. Petroff, J. Appl. Phys. 69 (1991) 6564.
11. I.-H Tan, R. Mirin, V. Jayarman, S. Shi, E. Hu and J. Bowers, Appl. Phys. Lett. 61 (1992) 300.
12. S. Fukatsu and Y. Shiraki, J. Crystal Growth 150 (1995) 1025.
13. C. Weisbuch and B. Vinter, in: Quantum Semiconductor Structures (Academic Press, New York, 1991) p. 215.