Electrical and optical properties of a n-type ZnO thin film deposited on a Si substrate by using a double RF Co-sputtering method

Journal of the Korean Physical Society

Volumn 49, Issue 3, 2006, Pages 1126-1129

  Lee, Jonghyun ^a   Choi, Wonjoon ^a   Kim, Chaeok ^a   Hong, Jinpyo ^a   Nahm, Tschang Uh ^a   Cheong, Hyeonsik ^b  

^a Hanyang University   (South Korea)

^b Sogang University   (South Korea)

Author keywords

Bandgap; PL; Thin film; ZnO

Indexed keywords

EID: 33749818831     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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