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Volumn 788, Issue , 2005, Pages 69-72

Atomic layer deposition of high k dielectric and metal gate stacks for MOS devices

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[No Author keywords available]

Indexed keywords


EID: 33749661380     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2062940     Document Type: Conference Paper
Times cited : (6)

References (20)
  • 12
    • 0001954222 scopus 로고    scopus 로고
    • 1998 International conference on characterization and metrology for ULSI technology
    • J. R. Hauser, K. Ahmed, 1998 International Conference on Characterization and Metrology for ULSI Technology, AIP Conf. Proc., 449(1), (1998) 235.
    • (1998) AIP Conf. Proc. , vol.449 , Issue.1 , pp. 235
    • Hauser, J.R.1    Ahmed, K.2
  • 16
    • 33749678383 scopus 로고    scopus 로고
    • P. D. Kirsch et al., to be submitted
    • P. D. Kirsch et al., to be submitted.
  • 17
    • 33749656052 scopus 로고    scopus 로고
    • N. Moumen et al., to be submitted
    • N. Moumen et al., to be submitted.
  • 20
    • 0004245602 scopus 로고    scopus 로고
    • (Semiconductor Industry Association, 2003 Edition) and 2004 update
    • International Technology Roadmap for Semiconductors (Semiconductor Industry Association, 2003 Edition) and 2004 update. See: http//public itrs.net
    • International Technology Roadmap for Semiconductors


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.