|
Volumn 8, Issue 10, 2006, Pages 1193-1201
|
Elucidation of the correlation between atomic-level defects in GaN nanoparticles and photoluminescence properties by NMR, XRD and TEM
|
Author keywords
Atomic level defects; Gallium nitride; Nuclear magnetic resonance; Photoluminescence
|
Indexed keywords
ATOMIC-LEVEL DEFECTS;
CONDUCTION BANDS;
ELECTRONIC EFFECTS;
NITROGEN-DEFICIENCY;
BAND STRUCTURE;
CORRELATION METHODS;
CRYSTAL ATOMIC STRUCTURE;
CRYSTAL DEFECTS;
NUCLEAR MAGNETIC RESONANCE;
PHOTOLUMINESCENCE;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION ANALYSIS;
GALLIUM NITRIDE;
|
EID: 33749587077
PISSN: 12932558
EISSN: None
Source Type: Journal
DOI: 10.1016/j.solidstatesciences.2006.06.002 Document Type: Article |
Times cited : (9)
|
References (33)
|