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Volumn 8, Issue 10, 2006, Pages 1193-1201

Elucidation of the correlation between atomic-level defects in GaN nanoparticles and photoluminescence properties by NMR, XRD and TEM

Author keywords

Atomic level defects; Gallium nitride; Nuclear magnetic resonance; Photoluminescence

Indexed keywords

ATOMIC-LEVEL DEFECTS; CONDUCTION BANDS; ELECTRONIC EFFECTS; NITROGEN-DEFICIENCY;

EID: 33749587077     PISSN: 12932558     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solidstatesciences.2006.06.002     Document Type: Article
Times cited : (9)

References (33)
  • 20
    • 0001562513 scopus 로고
    • Rietveld refinements made use of version 1.23 of the XND Rietveld code: (freely available from the CCP14 website at http://www.ccp14.ac.uk)
    • Rietveld refinements made use of version 1.23 of the XND Rietveld code:. Berar J.-F., and Garnier P. NIST Spec. Publ. 846 (1992) 212. http://www.ccp14.ac.uk (freely available from the CCP14 website at http://www.ccp14.ac.uk)
    • (1992) NIST Spec. Publ. , vol.846 , pp. 212
    • Berar, J.-F.1    Garnier, P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.