Influence of Precursor Route on the Photoluminescence of Bulk Nanocrystalline Gallium Nitride

Chemistry of Materials

Volumn 9, Issue 12, 1997, Pages 2671-2673

  Coffer, Jeffery L ^a   Johnson, Marc A ^a   Zhang, Libing ^a   Wells, Richard L ^b   Janik, Jerzy F ^b,c  

^a TEXAS CHRISTIAN UNIVERSITY   (United States)

^b DUKE UNIVERSITY   (United States)

^c AGH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001325571     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm9705193     Document Type: Article

References (21)

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18. Elemental analyses for a range of related GaN samples gave Ga/N ratios between 1.02/1.00 and 1.05/1.00, carbon contents generally well below 1%, and hydrogen contents on the order of a few tenths of a percent.
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21. The observed thermochemical instability of these precursors and available elemental analyses support gallium enrichment in the pyrolyzed GaN materials (C, H, and Li contents less than 0.1%; Ga/N ratios between 1.05/1.00 and 1.29/1.00).