Effects of low doping concentration on interconnected microstructural ZnO:Al thin films prepared by the sol-gel technique

EPJ Applied Physics

Volumn 35, Issue 3, 2006, Pages 195-200

  Xue, S W ^a,c   Zu, X T ^a,b   Xiang, X ^a   Deng, H ^a   Xu, Z Q ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

^c LINGNAN NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL EMISSION (DLE); DOPANTS; NEAR BAND EDGE (NBE);

CONCENTRATION (PROCESS); DOPING (ADDITIVES); MICROSTRUCTURE; SCANNING ELECTRON MICROSCOPY; SOL-GELS; SUBSTRATES;

THIN FILMS;

EID: 33749576372     PISSN: 12860042     EISSN: 12860050     Source Type: Journal    
DOI: 10.1051/epjap:2006096     Document Type: Article

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