Effect of dislocations on minority carrier diffusion length in practical silicon solar cells

Journal of Applied Physics

Volumn 100, Issue 6, 2006, Pages

  Kieliba, Thomas ^a,b   Riepe, Stephan ^a   Warta, Wilhelm ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b Bosch Solar Energy AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY VALUE PROBLEMS; CRYSTALLINE MATERIALS; DIFFUSION; DISLOCATIONS (CRYSTALS); MATHEMATICAL MODELS; SILICON WAFERS; THIN FILMS;

DISLOCATION DENSITY; MINORITY CARRIER DIFFUSIONS; PASSIVATING LAYERS; QUANTUM EFFICIENCY DATA;

SILICON SOLAR CELLS;

EID: 33749408483     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2338126     Document Type: Article

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