Analysis of photoexcited charge carrier density profiles in Si wafers by using an infrared camera

Applied Physics Letters

Volumn 80, Issue 3, 2002, Pages 437-439

  Brendel, Rolf ^a   Bail, Michael ^a   Bodmann, Benno ^a   Kentsch, Jörg ^b   Schulz, Max ^b  

^a BAVARIAN CENTER FOR APPLIED ENERGY RESEARCH ZAE BAYERN   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

A-SPOTS; INFRA-RED CAMERAS; REFLECTANCE MEASUREMENTS; SI WAFER;

CARRIER CONCENTRATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; TEMPERATURE INDICATING CAMERAS;

CARRIER LIFETIME;

EID: 79956056626     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1434308     Document Type: Article

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