Molecular dynamic simulation on boron cluster implantation for shallow junction formation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 251, Issue 2, 2006, Pages 390-394

  Yuan, Li ^a   Yu, Min ^a   Li, Wei ^a   Ji, Huihui ^a   Ren, Liming ^a   Zhan, Kai ^a   Huang, Ru ^a   Zhang, Xing ^a   Wang, Yangyuan ^a   Zhang, Jinyu ^b   Oka, Hideki ^c  

^a PEKING UNIVERSITY   (China)

^b D Center Co Ltd   (China)

^c FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Boron cluster; Implantation; Molecular dynamic; Simulation

Indexed keywords

BORON; COMPUTER SIMULATION; ION IMPLANTATION; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

BORON CLUSTER; DOPANT DISTRIBUTION; GEOMETRIC STRUCTURES; IMPLANTATION DEFECTS;

MOLECULAR DYNAMICS;

EID: 33749400339     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.08.003     Document Type: Article

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