Low energy implantation technology with molecular ion beam

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn 1, Issue , 2004, Pages 434-438

  Tanjyo, Masayasu ^a   Hamamoto, Nariaki ^a   Umisedo, Sei ^a   Nagayama, Tsutomu ^a   Sakai, Shigeki ^a   Naito, Masao ^a   Nagai, Nobuo ^a   Aoyama, Takayuki ^b   Nara, Yasuo ^b  

^a NISSIN ION EQUIPMENT CO LTD   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; DATA ACQUISITION; ELECTRIC SPACE CHARGE; INSULATION; ION IMPLANTATION; SEMICONDUCTOR JUNCTIONS;

ENERGY CONTAMINATION; LOW ENERGY IMPLANTATION TECHNOLOGY; MOLECULAR ION BEAM; SOLID PHASE EPITAXIAL (SPE);

ION BEAMS;

EID: 21644445915     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. TRS2003-FEP ; International Technology Roadmap for Semiconductors, Dec.2003 (Ed. by International SEMATEC)
2. S.Umisedo, Proceedings of IWJT2004, p.27
3. th International Conf. of Ion Sources, Oakland,(2001),13-1
4. A.G.Dirk et al, Proc. of 1998 International Conf. of Ion Implantation Technology, Kyoto,(1999),p.1167