A molecular dynamics simulation of cluster dissociation process under cluster ion implantation

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 1036-1040

  Hada, Yasuhiro ^a  

^a OKAYAMA UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Cluster dissociation; Internal energy; Lateral straggling; Molecular dynamics

Indexed keywords

AGGLOMERATION; BORON; BOUNDARY CONDITIONS; COMPUTER SIMULATION; DISSOCIATION; ION IMPLANTATION; OPTIMIZATION; SEMICONDUCTOR MATERIALS; SILICON; SINGLE CRYSTALS;

CLUSTER DISSOCIATION; INTERNAL ENERGY; LATERAL STRAGGLING;

MOLECULAR DYNAMICS;

EID: 0346055255     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.193     Document Type: Conference Paper

References (7)

1. Yamada I., et al. Mater. Sci. Eng. R34:2001;231.
2. Smith R., Shaw M., Webb R.P., Foad M.A. J. Appl. Phys. 83:1998;3148.
3. K. Goto, et al., IEDM Tech. Dig. (1997) 471.
4. Stillinger F.H., Weber T.A. Phys. Rev. B31:1985;5262.
5. Rasband P.B., Clancy P., Roberts B.W. J. Appl. Phys. 84:1998;2471.
6. Ziegler J.P., Biersack J.P., Littmark U. The Stopping and Range of Ions in Solids. 1985;Pergamon Press, New York.
7. Jeong-Won Kang, Eu-Suk Kang, Ho-Jung Hwang, J. Korean Phys. Soc. 34 (1999) 521.