Molecular dynamics simulation of ion implantation into hafnium dioxide

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 226, Issue 4, 2004, Pages 537-542

  Ji, Huihui ^a   Yu, Min ^a   Shi, Hao ^a   Shi, Xiaokang ^a   Huang, Ru ^a   Zhang, Xing ^a   Zhang, Jinyu ^b   Suzuki, Kunihiro ^b   Oka, Hideki ^b  

^a PEKING UNIVERSITY   (China)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Hafnium dioxide (HfO2); Ion implantation; Molecular dynamics (MD); Simulation

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; DENSITY (SPECIFIC GRAVITY); ELECTRONS; HAFNIUM COMPOUNDS; MOLECULAR DYNAMICS; MONTE CARLO METHODS; PERMITTIVITY;

ANGULAR MOMENTUM; ELECTRONIC STOPPING POWER MODELS; HAFNIUM DIOXIDE (HFO2); IMPLANT ENERGY;

ION IMPLANTATION;

EID: 9544252969     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.08.003     Document Type: Article

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